FESB16CTHE3_A/I
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | FESB16CTHE3_A/I |
---|---|
Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 150V 16A TO263AB |
Datenblätte: |
|
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1600+ | $1.353 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
Spannung - Forward (Vf) (Max) @ If | 975 mV @ 16 A |
Spannung - Sperr (Vr) (max) | 150 V |
Technologie | Standard |
Supplier Device-Gehäuse | TO-263AB (D²PAK) |
Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101 |
Rückwärts-Erholzeit (Trr) | 35 ns |
Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkteigenschaften | Eigenschaften |
---|---|
Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -65°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 150 V |
Strom - Richt (Io) | 16A |
Kapazität @ Vr, F | 175pF @ 4V, 1MHz |
Grundproduktnummer | FESB16 |
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 100V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 100V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 150V 16A TO263AB
DIODE GEN PURP 200V 16A TO263AB
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() FESB16CTHE3_A/IVishay General Semiconductor - Diodes Division |
Anzahl*
|
Zielpreis (USD)
|